High-quality growth of AlN epitaxial layer by plasma-assisted molecular-beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 1 A/B, 2002, Pages

  Jeganathan, Kulandaivel ^a   Kitamura, Toshio ^a   Shimizu, Mitsuaki ^a   Okumura, Hajime ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

AIN; Cathodoluminescence; Excitonic transitions; Molecular beam epitaxy; X ray diffraction

Indexed keywords

ALUMINUM NITRIDE; CATHODOLUMINESCENCE; LATTICE CONSTANTS; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

EXCITONIC TRANSITIONS;

MOLECULAR BEAM EPITAXY;

EID: 0037082093     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l28     Document Type: Article

References (13)