Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers

Journal of Crystal Growth

Volumn 287, Issue 2, 2006, Pages 586-590

  Collazo, R ^a   Mita, S ^a   Aleksov, A ^a   Schlesser, R ^a   Sitar, Z ^a  

^a North Carolina State University   (United States)

Author keywords

A1. Crystal strcture; A3. Chemical vapor deposition process; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SAPPHIRE; THIN FILMS;

POLARITY CONTROL SCHEME; SAPPHIRE WAFERS; SEMICONDUCTING III-V MATERIALS; SUBSTRATE ANNEALING;

CRYSTAL STRUCTURE;

EID: 30344467838     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.10.080     Document Type: Conference Paper

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