Methodology for small-signal model extraction of AlGaN HEMTs

IEEE Transactions on Electron Devices

Volumn 55, Issue 7, 2008, Pages 1603-1613

  Shealy, James R ^a   Wang, Jiali ^b   Brown, Richard ^a  

^a School of Operations Research and Industrial Engineering   (United States)

^b IBM RESEARCH   (United States)

Author keywords

AlGaN; Extraction; GaN; Gate extension; Gate inductance; High electron mobility transistor (HEMT); Intrinsic device; Pad capacitance; Parasitic; Small signal model

Indexed keywords

ELECTRON MOBILITY; EXTRACTION; HETEROJUNCTION BIPOLAR TRANSISTORS; MATHEMATICAL MODELS; PARAMETER EXTRACTION; SCATTERING PARAMETERS;

(001) PARAMETER; AIR BRIDGES; DEVICE PARAMETERS; DRAIN BIAS; HIGH ELECTRON MOBILITY TRANSISTOR (HEMTS); INTRINSIC MODEL PARAMETERS; LINEAR MODELING; MICROWAVE SYSTEMS; PARASITICS; PINCH OFF; POWER-HANDLING CAPABILITY; REVERSE BIASES; SELF-CONSISTENT APPROACH; SMALL-SIGNAL MODELING; SOURCE REGIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 46649086730     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.925335     Document Type: Article

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