A Q-band low phase noise monolithic AlGaN/GaN HEMT VCO

IEEE Microwave and Wireless Components Letters

Volumn 16, Issue 7, 2006, Pages 425-427

  Lan, X ^a   Wojtowicz, M ^a   Smorchkova, I ^a   Coffie, R ^a   Tsai, R ^a   Heying, B ^a   Truong, M ^a   Fong, F ^a   Kintis, M ^a   Namba, C ^a   Oki, A ^a   Wong, T ^b  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b ILLINOIS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Gallium nitride; Monolithic microwave integrated circuit (MMIC) oscillator; Phase noise

Indexed keywords

GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MILITARY APPLICATIONS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NATURAL FREQUENCIES; SPURIOUS SIGNAL NOISE; VOLTAGE CONTROL;

GAN TECHNOLOGY; LOW PHASE NOISE FREQUENCY SOURCES; MONOLITHIC MICROWAVE INTEGRATED CIRCUIT (MMIC) OSCILLATOR; PHASE NOISE;

VARIABLE FREQUENCY OSCILLATORS;

EID: 33746300792     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2006.877128     Document Type: Article

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