An accurate small-signal model for AlGaN-GaN HEMT suitable for scalable large-signal model construction

IEEE Microwave and Wireless Components Letters

Volumn 16, Issue 6, 2006, Pages 333-335

  Jarndal, Anwar ^a,b   Kompa, Günter ^a,b  

^a IEEE   (Germany)

^b UNIVERSITY OF KASSEL   (Germany)

Author keywords

GaN high electron mobility transistor (HEMT); High power devices; Small signal model

Indexed keywords

GATE WIDTH; HIGH POWER DEVICES; PARASITIC ELEMENTS; SMALL SIGNAL MODEL (SSM);

GALLIUM NITRIDE; GATES (TRANSISTOR); SEMICONDUCTING ALUMINUM COMPOUNDS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33746635219     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2006.875626     Document Type: Article

References (6)

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3. R. Goyal et al., Monolithic Microwave Integrated Circuit: Technology and Design. Norwood, MA: Artech House, 1989.
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