Etching characteristics and mechanisms of SrBi2Ta 2O9 thin films in CF4/Ar and Cl2/Ar inductively coupled plasmas

Thin Solid Films

Volumn 471, Issue 1-2, 2005, Pages 328-335

  Efremov, A M ^a,b   Kim, Dong Pyo ^a   Kim, Chang Il ^a  

^a Chung Ang University   (South Korea)

^b IVANOVO STATE UNIVERSITY OF CHEMISTRY AND TECHNOLOGY   (Russian Federation)

Author keywords

Dissociation; Electron temperature; Etch rate; Ion assisted etching; SBT

Indexed keywords

CARRIER CONCENTRATION; DISSOCIATION; ETCHING; FERROELECTRICITY; INDUCTIVELY COUPLED PLASMA; PERMITTIVITY; QUARTZ; RANDOM ACCESS STORAGE;

ELECTRON TEMPERATURE; ETCH RATE; ION-ASSISTED ETCHING; SBT;

THIN FILMS;

EID: 10644240957     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.06.126     Document Type: Article

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