The etching mechanism of (Zr0.8Sn0.2)TiO4(ZST) film by using Cl2/O2-gas plasma

Journal of the Korean Physical Society

Volumn 42, Issue SUPPL.2, 2003, Pages

  Kwon, K H ^d   Efremov, A M ^a   Yeom, G Y ^b   Kang, Y I ^c  

^a IVANOVO STATE UNIVERSITY OF CHEMISTRY AND TECHNOLOGY   (Russian Federation)

^b Sungkyunkwan University   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^d NONE

Author keywords

ICP etching; Langmuir probe; Plasma modeling; XPS; ZST film

Indexed keywords

EID: 0037310466     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (11)

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