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Journal of the Korean Physical Society

Volumn 51, Issue 5, 2007, Pages 1686-1694

Etch characteristics of Ge2Sb2Te5 (GST), SiO2 and a photoresist in an inductively coupled Cl2/Ar plasma

(6) Min, Nam Ki a Kim, Mansu a Kwon, Kwang Ho a Efremov, Alexander b Lee, Hyun Woo c Kim, Sungihl d

a Korea University (South Korea)

b IVANOVO STATE UNIVERSITY OF CHEMISTRY AND TECHNOLOGY (Russian Federation)

c Hanseo University (South Korea)

d Daejeon University (South Korea)

Author keywords

Etch mechanism; Etch rate; Photoresist

Indexed keywords

EID: 36849075673 PISSN: 03744884 EISSN: None Source Type: Journal
DOI: 10.3938/jkps.51.1686 Document Type: Article

Times cited : (9)

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