Electrical and structural properties of high- k Er-silicate gate dielectric formed by interfacial reaction between Er and Si O2 films

Applied Physics Letters

Volumn 91, Issue 1, 2007, Pages

  Choi, Chel Jong ^a   Jang, Moon Gyu ^a   Kim, Yark Yeon ^a   Jun, Myung Sim ^a   Kim, Tae Youb ^a   Song, Myeong Ho ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b National Nano Fab Center (NNFC)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VALUE; ER-SILICATE FILMS; THERMAL ANNEALING TEMPERATURE; TRAP DENSITY;

ANNEALING; CHEMICAL BONDS; GATE DIELECTRICS; PERMITTIVITY; SURFACE CHEMISTRY;

OXIDE FILMS;

EID: 36049024095     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2753720     Document Type: Article

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