-
1
-
-
0009681416
-
Modeling of Mechanical Stress in Silicon Isolation Technology and Its Influence on Device Characteristics,
-
Ph.D. Thesis
-
H.A. Rueda, "Modeling of Mechanical Stress in Silicon Isolation Technology and Its Influence on Device Characteristics," Ph.D. Thesis, 1999.
-
(1999)
-
-
Rueda, H.A.1
-
2
-
-
33846693940
-
Piezoresistance Effect in Germanium and Silicon
-
C.S. Smith, "Piezoresistance Effect in Germanium and Silicon," Physical Review, Vol. 94, No.l, pp. 42-49, 1953.
-
(1953)
Physical Review
, vol.94
, Issue.L
, pp. 42-49
-
-
Smith, C.S.1
-
3
-
-
0036923302
-
Novel Shallow Trench Isolation Process Using Flowable Oxide CVD for Sub-100nm DRAM
-
S.W. Chung et al., "Novel Shallow Trench Isolation Process Using Flowable Oxide CVD for Sub-100nm DRAM," Proc. IEDM, pp. 233-236, 2002.
-
(2002)
Proc. IEDM
, pp. 233-236
-
-
Chung, S.W.1
-
4
-
-
34247140142
-
Novel Enhanced Stressor with Graded Embedded SiGe Source/Drain for High Performance CMOS Devices
-
J.-P. Han et al., "Novel Enhanced Stressor with Graded Embedded SiGe Source/Drain for High Performance CMOS Devices," Proc. IEDM, 2006.
-
(2006)
Proc. IEDM
-
-
Han, J.-P.1
-
5
-
-
27144534837
-
Characteristics of High Performance PFETs with Embedded SiGe Source/Drain and 〈100〉 Channels on 45° Rotated Wafers
-
Q. Ouyang et al., "Characteristics of High Performance PFETs with Embedded SiGe Source/Drain and 〈100〉 Channels on 45° Rotated Wafers," Int. Symp. On VLSI Technology, pp. 27-28, 2005.
-
(2005)
Int. Symp. On VLSI Technology
, pp. 27-28
-
-
Ouyang, Q.1
-
6
-
-
33846601242
-
High-Performance and Low-Power CMOS Device Technologies Featuring Metal/High-k Gate Stacks with Uniaxial Strained Silicon Channels on (100) and (110) Substrates
-
Y. Tateshita et al., "High-Performance and Low-Power CMOS Device Technologies Featuring Metal/High-k Gate Stacks with Uniaxial Strained Silicon Channels on (100) and (110) Substrates," Proc. IEDM, 2006.
-
(2006)
Proc. IEDM
-
-
Tateshita, Y.1
-
7
-
-
27744459165
-
Investigation of CMOS Devices with Embedded SiGe Source/Drain on Hybrid Orientation Substrates
-
Q. Ouyang et al., "Investigation of CMOS Devices with Embedded SiGe Source/Drain on Hybrid Orientation Substrates," Symposium on VLSI Technology, pp. 28-29, 2005.
-
(2005)
Symposium on VLSI Technology
, pp. 28-29
-
-
Ouyang, Q.1
-
8
-
-
33646072123
-
Hybrid-Orientation Technology (HOT): Opportunities and Challenges
-
M. Yang et al., "Hybrid-Orientation Technology (HOT): Opportunities and Challenges," IEEE Tran. On Electron Devices, Vol. 53, No. 5, pp. 965-978, 2006.
-
(2006)
IEEE Tran. On Electron Devices
, vol.53
, Issue.5
, pp. 965-978
-
-
Yang, M.1
-
9
-
-
33644770462
-
High Performance 65 nm SOI Technology with Enhanced Transistor Strain and Advanced-Low-K BEOL
-
W.-H. Lee et al., "High Performance 65 nm SOI Technology with Enhanced Transistor Strain and Advanced-Low-K BEOL," Proc. IEDM, 2005.
-
(2005)
Proc. IEDM
-
-
Lee, W.-H.1
-
10
-
-
28844456770
-
Dual Stress Liner for High Performance sub-45nm Gate Length SOI CMOS Manufacturing
-
H.S Yang et al., "Dual Stress Liner for High Performance sub-45nm Gate Length SOI CMOS Manufacturing," Proc. IEDM, 2004.
-
(2004)
Proc. IEDM
-
-
Yang, H.S.1
-
11
-
-
41149150847
-
Stress Memorization Technique (SMT) Optimization for 45nm CMOS
-
C. Ortolland, "Stress Memorization Technique (SMT) Optimization for 45nm CMOS," Symp. on VLSI Technology, pp. 78-79, 2006.
-
(2006)
Symp. on VLSI Technology
, pp. 78-79
-
-
Ortolland, C.1
-
12
-
-
4544382132
-
Stress Memorization Technique (SMT) by Selectively Strained-Nitride Capping for Sub-65nm High-Performance Strained-Si Device Application
-
C.-H. Chen et al, "Stress Memorization Technique (SMT) by Selectively Strained-Nitride Capping for Sub-65nm High-Performance Strained-Si Device Application," Symp. on VLSI Technology, pp. 56-57, 2004.
-
(2004)
Symp. on VLSI Technology
, pp. 56-57
-
-
Chen, C.-H.1
-
13
-
-
0031634341
-
A New STI Process Based on Selective Oxide Deposition
-
N. Elbel, Z. Gabric, W. Langheinrich and B. Neureither, "A New STI Process Based on Selective Oxide Deposition," Symposium on VLSI Technology Digest of Technical Papers, pp. 208-209, 1998.
-
(1998)
Symposium on VLSI Technology Digest of Technical Papers
, pp. 208-209
-
-
Elbel, N.1
Gabric, Z.2
Langheinrich, W.3
Neureither, B.4
-
14
-
-
0029703518
-
-
H. S. Lee et al. An Optimized Densification of the Filled Oxide for Quarter Micron Shallow Trench Isolation (STI), Symp. on VLSI Technology Digest of Technical Papers, pp. 158-159, 1996.
-
H. S. Lee et al. "An Optimized Densification of the Filled Oxide for Quarter Micron Shallow Trench Isolation (STI)," Symp. on VLSI Technology Digest of Technical Papers, pp. 158-159, 1996.
-
-
-
-
15
-
-
12344268000
-
Modeling Mechanical Stress Effect on Dopant Diffusion in Scaled MOSFETs
-
Jan
-
Y.-M. Sheu et al. "Modeling Mechanical Stress Effect on Dopant Diffusion in Scaled MOSFETs," IEEE Tran. on Electron Devices, Vol. 52, No. 1, pp. 30-38, Jan. 2005.
-
(2005)
IEEE Tran. on Electron Devices
, vol.52
, Issue.1
, pp. 30-38
-
-
Sheu, Y.-M.1
-
16
-
-
3943051393
-
Electrical Analysis of Mechanical Stress Induced by STI in Short MOSFETs Using Externally Applied Stress
-
Aug
-
C. Gallon et al. "Electrical Analysis of Mechanical Stress Induced by STI in Short MOSFETs Using Externally Applied Stress," IEEE Tran. on Electron Devices, Vol. 51, No. 8, pp. 1254-1261, Aug. 2004.
-
(2004)
IEEE Tran. on Electron Devices
, vol.51
, Issue.8
, pp. 1254-1261
-
-
Gallon, C.1
-
17
-
-
0035445467
-
Piezoresistive Characteristics of Short-Channel MOSFETs on (100) Silicon
-
Sep
-
A.T. Bradley. R. C Jaeger. J.C. Suhling and K.J. O'Connor, "Piezoresistive Characteristics of Short-Channel MOSFETs on (100) Silicon," IEEE Tran. on Electron Devices, Vol. 48, No. 9, pp. 2009-2025, Sep. 2001.
-
(2001)
IEEE Tran. on Electron Devices
, vol.48
, Issue.9
, pp. 2009-2025
-
-
Bradley, A.T.1
Jaeger, R.C.2
Suhling, J.C.3
O'Connor, K.J.4
-
18
-
-
0242696135
-
A Scaleable Model for STI Mechanical Stress Effect on Layout Dependence of MOS Electrical Characteristics
-
K.-W. Su et al. "A Scaleable Model for STI Mechanical Stress Effect on Layout Dependence of MOS Electrical Characteristics," IEEE Custom Integrated Circuits Conference, pp. 245-248, 2003.
-
(2003)
IEEE Custom Integrated Circuits Conference
, pp. 245-248
-
-
Su, K.-W.1
-
20
-
-
33846104532
-
TCAD Modeling of Strain-Engineered MOSFETs
-
L. Smith, "TCAD Modeling of Strain-Engineered MOSFETs," Mater. Res. Soc. Symp. Proc., vol. 913, 2006.
-
(2006)
Mater. Res. Soc. Symp. Proc
, vol.913
-
-
Smith, L.1
-
21
-
-
84886740677
-
Stress-Aware Design Methodology
-
V. Moroz, L. Smith, X.-W. Lin, D. Pramanik and G. Rollins, "Stress-Aware Design Methodology," Int. Symposium on Quality Electronic Design, 2006.
-
(2006)
Int. Symposium on Quality Electronic Design
-
-
Moroz, V.1
Smith, L.2
Lin, X.-W.3
Pramanik, D.4
Rollins, G.5
-
22
-
-
33846280931
-
Modeling Well Edge Proximity Effect on Highly-Scaled MOSFETs
-
Y.-M. Sheu et al., "Modeling Well Edge Proximity Effect on Highly-Scaled MOSFETs," IEEE Custom Integrated Circuits Conference, pp. 831-834, 2005.
-
(2005)
IEEE Custom Integrated Circuits Conference
, pp. 831-834
-
-
Sheu, Y.-M.1
-
23
-
-
1642298162
-
Impact of Reducing STI-Induced Stress on Layout Dependence of MOSFET Characteristics
-
M. Miyamoto, H. Ohta, Y. Kumagai, Y. Sonobe. K. Ishibashi and Y. Tainaka, "Impact of Reducing STI-Induced Stress on Layout Dependence of MOSFET Characteristics," IEEE Trans. On Electron Devices 51(3), pp. 440-443, 2004.
-
(2004)
IEEE Trans. On Electron Devices
, vol.51
, Issue.3
, pp. 440-443
-
-
Miyamoto, M.1
Ohta, H.2
Kumagai, Y.3
Sonobe, Y.4
Ishibashi, K.5
Tainaka, Y.6
-
25
-
-
40949090476
-
Advanced Analysis and Modeling of MOSFET Characteristic Fluctuation Caused by Layout Variation
-
H. Tsuno et al., "Advanced Analysis and Modeling of MOSFET Characteristic Fluctuation Caused by Layout Variation," Symposium on VLSI Technology, pp. 204-205, 2007.
-
(2007)
Symposium on VLSI Technology
, pp. 204-205
-
-
Tsuno, H.1
|