-
1
-
-
0036932273
-
Accurate modeling of trench isolation induced mechanical stress effects on MOSFET electrical performance
-
R. A. Bianchi, G. Bouche, O. Roux-dit-Buisson, "Accurate modeling of trench isolation induced mechanical stress effects on MOSFET electrical performance," Proc. IEDM, pp. 117-120, 2002.
-
(2002)
Proc IEDM
, pp. 117-120
-
-
Bianchi, R.A.1
Bouche, G.2
Rouxdit-Buisson, O.3
-
2
-
-
84886742684
-
-
BSIM4.3 Compact Model, 2003
-
BSIM4.3 Compact Model, www.berkeley.edu, 2003.
-
-
-
-
3
-
-
3242671509
-
A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors
-
T. Ghani, M. Armstrong, C. Auth, M. Bost, O. Charvat, G. Glass, T. Hoffman, K. Johnson, C. Kenyon, J. Klaus, B. McIntyre, K. Mistry, A. Murthy, J. Silberstein, S. Sivakumar, P. Smith, K. Zawadski, S. Thompson, and M. Bohr, "A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors," Proc. IEDM, pp. 978-980, 2003.
-
(2003)
Proc IEDM
, pp. 978-980
-
-
Ghani, T.1
Armstrong, M.2
Auth, C.3
Bost, M.4
Charvat, O.5
Glass, G.6
Hoffman, T.7
Johnson, K.8
Kenyon, C.9
Klaus, J.10
McIntyre, B.11
Mistry, K.12
Murthy, A.13
Silberstein, J.14
Sivakumar, S.15
Smith, P.16
Zawadski, K.17
Thompson, S.18
Bohr, M.19
-
4
-
-
4544284412
-
35% drive current improvement from recessed-sige drain extensions on 37 nm gate length pmos
-
P. R. Chidambaram, B. A. Smith, L. H. Hall, H. Bu, S. Chakravarthi, Y. Kim, A. V. Samoilov, A. T. Kim, P. J. Jones, R. B. Irwin, M. J. Kim, A. L. P. Rotondaro, C. F. Machala and D. T. Grider, "35% Drive Current Improvement from Recessed-SiGe Drain Extensions on 37 nm Gate Length PMOS," VLSI Symp. Tech. Dig., pp. 48-49, 2004.
-
(2004)
VLSI Symp. Tech. Dig.
, pp. 48-49
-
-
Chidambaram, P.R.1
Smith, B.A.2
Hall, L.H.3
Bu, H.4
Chakravarthi, S.5
Kim, Y.6
Samoilov, A.V.7
Kim, A.T.8
Jones, P.J.9
Irwin, R.B.10
Kim, M.J.11
Rotondaro, A.L.P.12
Machala, C.F.13
Grider, D.T.14
-
5
-
-
33646079140
-
Layout impact on the performance of a locally strained pmosfet
-
G. Eneman, P. Verheyen, R. Rooyackers, F. Nouri, L. Washington, R. Degraeve, B. Kaczer, V. Moroz, A. De Keersgieter, R. Schreutelkamp, M. Kawaguchi, Y. Kim, A. Samoilov, L. Smith, P. P. Absil, K. De Meyer, M. Jurczak, and S. Biesemans, "Layout Impact on the Performance of a Locally Strained PMOSFET," 2005 Symposium on VLSI Technology Digest of Technical Papers, pp.22-23, 2005.
-
(2005)
2005 Symposium on VLSI Technology Digest of Technical Papers
, pp. 22-23
-
-
Eneman, G.1
Verheyen, P.2
Rooyackers, R.3
Nouri, F.4
Washington, L.5
Degraeve, R.6
Kaczer, B.7
Moroz, V.8
De Keersgieter, A.9
Schreutelkamp, R.10
Kawaguchi, M.11
Kim, Y.12
Samoilov, A.13
Smith, L.14
Absil, P.P.15
De Meyer, K.16
Jurczak, M.17
Biesemans, S.18
-
6
-
-
0142198802
-
Modeling the impact of stress on silicon processes and devices
-
V. Moroz, N. Strecker, X. Xu, L. Smith, and I. Bork, "Modeling the impact of stress on silicon processes and devices," Mat. Sci. in Semicond. Processing, v.6, pp.27-36, 2003.
-
(2003)
Mat. Sci. in Semicond. Processing
, vol.6
, pp. 27-36
-
-
Moroz, V.1
Strecker, N.2
Xu, X.3
Smith, L.4
Bork, I.5
-
7
-
-
33846693940
-
Piezoresistance effect in germanium and silicon
-
C. S. Smith, "Piezoresistance Effect in Germanium and Silicon," Phys. Rev., Vol. 94, No. 1, pp. 42-49, 1954.
-
(1954)
Phys. Rev.
, vol.94
, Issue.1
, pp. 42-49
-
-
Smith, C.S.1
-
8
-
-
33745709140
-
The impact of layout on stress-enhanced transistor performance
-
V. Moroz, G. Eneman, P. Verheyen, F. Nouri, L. Washington, L. Smith, M. Jurczak, D. Pramanik, and X. Xu, "The impact of layout on stress-enhanced transistor performance," Proc. SISPAD, pp. 143-146, 2005.
-
(2005)
Proc SISPAD
, pp. 143-146
-
-
Moroz, V.1
Eneman, G.2
Verheyen, P.3
Nouri, F.4
Washington, L.5
Smith, L.6
Jurczak, M.7
Pramanik, D.8
Xu, X.9
-
9
-
-
21644478626
-
A systematic study of trade-offs in engineering a locally strained pMOSFET
-
F. Nouri, P. Verheyen, L. Washington, V. Moroz, I. De Wolf, M. Kawaguchi, S. Biesemans, R. Schreutelkamp, Y. Kim, M. Shen, X. Xu, R. Rooyackers, M. Jurczak, G. Eneman, K. De Meyer, L. Smith, D. Pramanik, H. Forstner, S. Thirupapuliyur, and G.S. Higashi, "A systematic study of trade-offs in engineering a locally strained pMOSFET," Proc. IEDM, pp. 1055-1058, 2004.
-
(2004)
Proc IEDM
, pp. 1055-1058
-
-
Nouri, F.1
Verheyen, P.2
Washington, L.3
Moroz, V.4
De Wolf, I.5
Kawaguchi, M.6
Biesemans, S.7
Schreutelkamp, R.8
Kim, Y.9
Shen, M.10
Xu, X.11
Rooyackers, R.12
Jurczak, M.13
Eneman, G.14
De Meyer, K.15
Smith, L.16
Pramanik, D.17
Forstner, H.18
Thirupapuliyur, S.19
Higashi, G.S.20
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