메뉴 건너뛰기




Volumn , Issue , 2006, Pages 807-812

Stress-aware design methodology

Author keywords

[No Author keywords available]

Indexed keywords

45NM TECHNOLOGY; DESIGN METHODOLOGY; MECHANICAL STRESS; NONUNIFORM STRESS DISTRIBUTION; PERFORMANCE VARIATIONS; SHALLOW TRENCH ISOLATION; SOURCE AND DRAINS; TRANSISTOR PERFORMANCE;

EID: 84886740677     PISSN: 19483287     EISSN: 19483295     Source Type: Conference Proceeding    
DOI: 10.1109/ISQED.2006.124     Document Type: Conference Paper
Times cited : (34)

References (9)
  • 1
    • 0036932273 scopus 로고    scopus 로고
    • Accurate modeling of trench isolation induced mechanical stress effects on MOSFET electrical performance
    • R. A. Bianchi, G. Bouche, O. Roux-dit-Buisson, "Accurate modeling of trench isolation induced mechanical stress effects on MOSFET electrical performance," Proc. IEDM, pp. 117-120, 2002.
    • (2002) Proc IEDM , pp. 117-120
    • Bianchi, R.A.1    Bouche, G.2    Rouxdit-Buisson, O.3
  • 2
    • 84886742684 scopus 로고    scopus 로고
    • BSIM4.3 Compact Model, 2003
    • BSIM4.3 Compact Model, www.berkeley.edu, 2003.
  • 7
    • 33846693940 scopus 로고
    • Piezoresistance effect in germanium and silicon
    • C. S. Smith, "Piezoresistance Effect in Germanium and Silicon," Phys. Rev., Vol. 94, No. 1, pp. 42-49, 1954.
    • (1954) Phys. Rev. , vol.94 , Issue.1 , pp. 42-49
    • Smith, C.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.