Advanced analysis and modeling of MOSFET characteristic fluctuation caused by layout variation

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2007, Pages 204-205

  Tsuno, H ^a   Anzai, K ^a   Matsumura, M ^a   Minami, S ^a   Honjo, A ^a   Koike, H ^a   Hiura, Y ^a   Takeo, A ^a   Fu, W ^a   Fukuzaki, Y ^a   Kanno, M ^a   Ansai, H ^a   Nagashima, N ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET DEVICES; NETWORKS (CIRCUITS); SEMICONDUCTING SILICON; SPEECH ANALYSIS; STRESSES; TECHNOLOGY;

65-NM NODES; ADVANCED ANALYSIS; CIRCUIT PERFORMANCES; CMOS CIRCUITS; GA TE LENGTHS; LAYOUT VARIATION; MECHANICAL STRESSING; VLSI TECHNOLOGIES;

ELECTRICAL ENGINEERING;

EID: 40949090476     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2007.4339693     Document Type: Conference Paper

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