Characteristics of high performance PFETs with embedded SiGe source/drain and 〈100〉 channels on 45° rotated wafers

2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers

Volumn , Issue , 2005, Pages 27-28

  Ouyang, Qiqing ^a   Ieong, Meikei ^b   Fischetti, Massimo ^a   Panda, Siddhartha ^b   Boyd, Diane ^b   Rim, Ken ^b   Ott, John A ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LONGITUDINAL STRESS; PERFORMANCE VARIATION;

ROBUSTNESS (CONTROL SYSTEMS); SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; STRESS ANALYSIS;

FIELD EFFECT TRANSISTORS;

EID: 27144534837     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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