The effect of localized mask density variations on image quality in EUV lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6517, Issue PART 2, 2007, Pages

  Park, Jinhong ^a   Seo, Hwanseok ^a   Kim, Seong Sue ^a   Cho, HanKu ^a   Moon, Joo Tae ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Background density; Dummy implementation; EUV lithography; Selective biasing; Stray light

Indexed keywords

IMAGE QUALITY; LIGHT SCATTERING; LOGIC DEVICES; PHOTOMASKS; STRAY LIGHT;

BACKGROUND DENSITY; DUMMY IMPLEMENTATION; SELECTIVE BIASING;

EXTREME ULTRAVIOLET LITHOGRAPHY;

IMAGE QUALITY; LITHOGRAPHY; OPTICAL SCATTERING;

EID: 35148864016     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.713303     Document Type: Conference Paper

References (7)

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7. C. Krautschik, et. al,"Impact of EUV light scatter on CD control as a result of mask density changes," Proceeding of SPIE, vol. 4688, pp. 289-301, 2002.