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18544378726
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Performance upgrades in the EUV engineering test stand
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D. A. Tichenor, W. C. Replogle, S. H. Lee, W. P. Ballard, A. H. Leung, G. D. Kubiak, L. E. Klebanoff, S. Graham, J. E. M. Goldsmith, K. L. Jefferson, J. B. Wronosky, T. G. Smith, T. A Johnson, H. Shields, L. C. Hale, H. N. Chapman, J. S. Taylor, D. W. Sweeney, J. A. Folta, G. E. Sommargren, K. A. Goldberg, P. Naulleau, D. T. Attwood, and E. M. Gullikson, "Performance upgrades in the EUV Engineering Test Stand, " Proc. SPIE, 4688, 72 (2002).
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Tichenor, D.A.1
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Lee, S.H.3
Ballard, W.P.4
Leung, A.H.5
Kubiak, G.D.6
Klebanoff, L.E.7
Graham, S.8
Goldsmith, J.E.M.9
Jefferson, K.L.10
Wronosky, J.B.11
Smith, T.G.12
Johnson, T.A.13
Shields, H.14
Hale, L.C.15
Chapman, H.N.16
Taylor, J.S.17
Sweeney, D.W.18
Folta, J.A.19
Sommargren, G.E.20
Goldberg, K.A.21
Naulleau, P.22
Attwood, D.T.23
Gullikson, E.M.24
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2
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0036381345
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Impact of EUV light scatter on CD control as a result of mask density change
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C. Krautschik, M. Ito, I. Nishiyama, and S. Okazaki, "Impact of EUV light scatter on CD control as a result of mask density change, " Proc. SPIE, 4688, 289 (2002).
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Krautschik, C.1
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3
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13244299674
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Effects of flare in extreme ultraviolet lithography: Learning from the engineering test stand
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M. Chandhok, S. H. Lee, and T. Bacuita, "Effects of flare in extreme ultraviolet lithography: Learning from the engineering test stand, " J. Vac. Sci. Technol. B 22, 2966 (2004).
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Chandhok, M.1
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Bacuita, T.3
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4
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24644503076
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Lithographic performance of high-numerical-aperture (NA=0.3) EUV small-field exposure tool (HINA)
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H. Oizumi, Y. Tanaka, F. Kumasaka, I. Nishiyama, H. Kondo, M. Shiraishi, T. Oshino, K. Sugisaki, and K. Murakami, "Lithographic performance of high-numerical-aperture (NA=0.3) EUV small-field exposure tool (HINA), " Proc. SPIE, 5751, 102 (2005).
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Oizumi, H.1
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Oshino, T.7
Sugisaki, K.8
Murakami, K.9
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5
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35148819703
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Characterization of low-order aberrations in the SEMATECH Albany MET tool
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P. Naulleau, J. Waterman, and K. Dean, "Characterization of low-order aberrations in the SEMATECH Albany MET tool, " Proc. SPIE, 6517, 65172Q (2007).
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Naulleau, P.1
Waterman, J.2
Dean, K.3
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6
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0141794542
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Lithograhpic flare measurements of EUV full-field projection optics
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S. H. Lee, P. Naulleau, C. Krautschik, M. Chandhok, H. N. Chapman, D. J. O'Connell, and M. Goldstein, "Lithograhpic flare measurements of EUV full-field projection optics, " Proc. SPIE, 5037, 103 (2003).
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Lee, S.H.1
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Chandhok, M.4
Chapman, H.N.5
O'Connell, D.J.6
Goldstein, M.7
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7
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24644496629
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Characterization of flare on Intel's EUV MET
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S. H. Lee, M. Chandhok, J. Roberts, and B. J. Rice, " Characterization of flare on Intel's EUV MET, " Proc. SPIE, 5751, 293 (2005).
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Lee, S.H.1
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Rice, B.J.4
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8
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24644510709
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Lithographic measurement of EUV flare in the 0.3-NA micro exposure tool optics at the advanced light source
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J. P. Cain, P. Naulleau, and C. J. Spanos, "Lithographic measurement of EUV flare in the 0.3-NA Micro Exposure Tool optics at the Advanced Light Source, " Proc. SPIE, 5751, 301 (2005).
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Cain, J.P.1
Naulleau, P.2
Spanos, C.J.3
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9
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35148863105
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Path to the HVM in EUVL through the development and evaluation of the SFET
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S. Uzawa, H. Kubo, Y. Miwa, T. Tsuji, and H. Morishima, "Path to the HVM in EUVL through the development and evaluation of the SFET, " Proc. SPIE, 6517, 651708 (2007).
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Uzawa, S.1
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42149136455
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Impact of mask absorber properties on printability in EUV lithography
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T. Kamo, H. Aoyama, T. Tanaka, and O. Suga, "Impact of mask absorber properties on printability in EUV lithography, " Proc. SPIE, 6730, 673017 (2007).
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Kamo, T.1
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11
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Performance of EUV photoresists on the ALS micro exposure tool
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T. Köhler, R. L. Brainard, P. P. Naulleau, D. V. Steenwinckel, J. H. Lammers, K. A. Goldberg, J. F. Mackevich, and P. Trefonas, "Performance of EUV photoresists on the ALS micro exposure tool, " Proc. of SPIE, 5753, 754 (2005).
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Köhler, T.1
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Lammers, J.H.5
Goldberg, K.A.6
Mackevich, J.F.7
Trefonas, P.8
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12
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85076473652
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Scattered light in photolithographic lenses
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