Flare-variation compensation for 32 nm line and space pattern for device manufacturing on extreme-ultraviolet lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 1, 2008, Pages 80-83

  Aoyama, H ^a   Iriki, N ^a   Tanaka, T ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; EXTREME ULTRAVIOLET LITHOGRAPHY; GAUSSIAN DISTRIBUTION; PHOTOGRAMMETRY; SEMICONDUCTOR DEVICE MANUFACTURE;

FLARE-VARIATION COMPENSATION; MASK CD ERROR; SPACE PATTERN;

MICROELECTRONICS;

EID: 38849199818     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2821953     Document Type: Article

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