Application of liquid phase deposited silicon dioxide to metal-oxide-semiconductor capacitor and amorphous silicon thin-film transistor

IEEE Transactions on Electron Devices

Volumn 43, Issue 4, 1996, Pages 599-604

  Chou, Jenq Shiuh ^a   Lee, Si Chen ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CAPACITANCE; CAPACITORS; DEPOSITION; ELECTRIC VARIABLES MEASUREMENT; HYSTERESIS; INTERFACES (MATERIALS); METALLIZING; MOS DEVICES; SILICA; THIN FILM TRANSISTORS;

CAPACITANCE VOLTAGE CHARACTERISTICS; GATE INSULATOR; LIQUID PHASE DEPOSITION; THRESHOLD VOLTAGE SHIFT;

ELECTRIC INSULATING MATERIALS;

EID: 0030125963     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.485542     Document Type: Article

References (14)

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