Performance and degradation in single grain-size pentacene thin-film transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 6 A, 2003, Pages 3662-3665

  Komoda, Taiki ^a   Kita, Koji ^a   Kyuno, Kentaro ^a   Toriumi, Akira ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Charging; Degradation; Discharging; Hysteresis; Moisture; Pentacene; Short channel effect; Submicron; TFT

Indexed keywords

DEGRADATION; ELECTRON BEAM LITHOGRAPHY; GATES (TRANSISTOR); GRAIN SIZE AND SHAPE; HYSTERESIS; LEAKAGE CURRENTS; MOISTURE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; SILICON WAFERS;

LIFT-OFF PROCESS; PENTACENE; SHORT-CHANNEL EFFECT;

THIN FILM TRANSISTORS;

EID: 0041379529     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.3662     Document Type: Article

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