Interface states in Hf-based stacks and their impact on the reliability of these alternative oxides

ECS Transactions

Volumn 3, Issue 3, 2006, Pages 81-95

  Garros, X ^a   Reimbold, G ^a   Louveau, O ^b   Martin, F ^a  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYSTAL DEFECTS; ELECTRIC VARIABLES MEASUREMENT; HAFNIUM COMPOUNDS; HEAT TREATMENT; RELIABILITY; SILICA;

CMOS TECHNOLOGIES; INTERFACE DEFECTS; METAL GATE; PLASMA CHARGING;

GATES (TRANSISTOR);

EID: 33846964941     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355701     Document Type: Conference Paper

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