SCOPUS 정보 검색 플랫폼

Volumn 1, Issue 5, 2006, Pages 733-743

Charge trapping - A major reliability challenge for high-k gate dielectrics

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRON TRAPS; HOLE TRAPS; MOSFET DEVICES; PERMITTIVITY; THRESHOLD VOLTAGE;

DIELECTRIC BREAKDOWN; HOLE CURRENTS; STRESS CONDITIONS; THRESHOLD VOLTAGE SHIFT;

GATES (TRANSISTOR);

EID: 33845252458 PISSN: 19385862 EISSN: 19386737 Source Type: Conference Proceeding
DOI: 10.1149/1.2209319 Document Type: Conference Paper

Times cited : (3)

References (9)

1
- 20444477538
- Special reliability features for Hf-based high-κ gate dielectrics
- T.P. Ma, H.M. Bu, X.W. Wang, L.Y. Song, W. He, M. M. Wang et al. "Special reliability features for Hf-based high-κ gate dielectrics", IEEE TDMR, vol. 5, no. 1, p. 36, 2005
- (2005) IEEE TDMR , vol.5 , Issue.1 , pp. 36
- Ma, T.P.¹ Bu, H.M.² Wang, X.W.³ Song, L.Y.⁴ He, W.⁵ Wang, M.M.⁶

2
- 0038650830
- Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks
- S. Zafar, A. Callegari, E. Gusev, and M. V. Fischetti, "Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks", J. Appl. Phys. Vol.93, p. 9298, 2003
- (2003) J. Appl. Phys. , vol.93 , pp. 9298
- Zafar, S.¹ Callegari, A.² Gusev, E.³ Fischetti, M.V.⁴

3
- 0037718399
- Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics
- A. Kerber, E. Cartier, L. Pantisano, R. Degraeve, T. Kauerauf, Y. Kim, A. Hou, g. Groeseneken, H. E. Macs, and U. Schwalke, "Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics", IEEE EDL, vol. 24, no. 2, p.87, 2003
- (2003) IEEE EDL , vol.24 , Issue.2 , pp. 87
- Kerber, A.¹ Cartier, E.² Pantisano, L.³ Degraeve, R.⁴ Kauerauf, T.⁵ Kim, Y.⁶ Hou, A.⁷ Groeseneken, G.⁸ Macs, H.E.⁹ Schwalke, U.¹⁰

4
- 4544257707
- A model for negative bias temperature instability (NBTI) in oxide and high k pFETs
- Sufi Zafar, Byoung H. Lee, James Stathis and Tak Ning, "A model for negative bias temperature instability (NBTI) in oxide and high k pFETs, 2004 symposium on VLSI Technology Digest of Technical Papers,
- 2004 Symposium on VLSI Technology Digest of Technical Papers
- Zafar, S.¹ Lee, B.H.² Stathis, J.³ Ning, T.⁴

5
- 20944450469
- A statistical mechanics based model for negative bias temperature instability (NBTI) induced degradation
- Sufi Zafar, "A statistical mechanics based model for negative bias temperature instability (NBTI) induced degradation", Joumal of Applied Physics, 97. 103709 (2005)
- (2005) Joumal of Applied Physics , vol.97 , pp. 103709
- Zafar, S.¹

6
- 17044380280
- Reaction-dispersive proton transport model for negative bias temperature instabilities
- M. Houssa, M. Aoulaiche, S. DeGendit, G. Groeseneken, M. M. Heyns, A. Stesmans, "Reaction-dispersive proton transport model for negative bias temperature instabilities", Appl. Phys. Letts. Vol. 86, no. 9, 3506, 2004
- (2004) Appl. Phys. Letts. , vol.86 , Issue.9 , pp. 3506
- Houssa, M.¹ Aoulaiche, M.² Degendit, S.³ Groeseneken, G.⁴ Heyns, M.M.⁵ Stesmans, A.⁶

8
- 4544291166
- M. Houssa, S. De Gendt, et al, 2004 Symposium on VLSI Technology Digest of Technical Papers, p. 212
- (2004) Symposium on VLSI Technology Digest of Technical Papers , pp. 212
- Houssa, M.¹ De Gendt, S.²

9
- 84866629211
- V. Huard, M. Denais, F. Perier and C. R. Parthasarathy, INFOS (2003)
- (2003) INFOS
- Huard, V.¹ Denais, M.² Perier, F.³ Parthasarathy, C.R.⁴

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