Investigation and modeling of hot carrier effects on performance of 45- and 55-nm NMOSFETs with RF automatic measurement

IEEE Transactions on Electron Devices

Volumn 55, Issue 6, 2008, Pages 1541-1546

  Tang, Mao Chyuan ^a   Fang, Yean Kuen ^a   Liao, Wen Shiang ^b   Chen, David C ^b   Yeh, Chune Sin ^b   Chien, Shan Chieh ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

Cutoff frequency; Hot carrier effect (HCE); In line ground signal signal ground (GSSG) test pad structure; Surface channel resistance model; Transconductance

Indexed keywords

CAPACITANCE; CUTOFF FREQUENCY; GATES (TRANSISTOR); HOT CARRIERS; TRANSCONDUCTANCE;

IN-LINE GROUND-SIGNAL-SIGNAL-GROUND TEST-PAD STRUCTURE; SURFACE CHANNEL RESISTANCE MODEL;

MOSFET DEVICES;

EID: 44949254183     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.921998     Document Type: Article

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