Electrical-stress effects and device modeling of 0.18-μm RF MOSFETs

IEEE Transactions on Electron Devices

Volumn 53, Issue 4, 2006, Pages 636-642

  Kao, H L ^a   Chin, Albert ^a   Liao, C C ^a   Chen, C C ^a   McAlister, Sean P ^b   Chi, C C ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Lifetime; Minimum noise figure (NFmin); Model; RF noise; Stress

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; MATHEMATICAL MODELS; MICROSTRIP LINES; SPURIOUS SIGNAL NOISE;

ELECTRICAL STRESS; NOISE FIGURE;

MOSFET DEVICES;

EID: 33645731912     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.870284     Document Type: Article

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