RF S-parameter degradation under hot carrier stress

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 422-425

  Walko, Joseph P ^a   Abadeer, Bill ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

Degradation; Ft; Modeling; Reliability; RF; Simulation; Voltage stress

Indexed keywords

FT; MODELING; RF; VOLTAGE STRESS EFFECTS;

CAPACITANCE; CAPACITORS; CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; MATHEMATICAL MODELS; THRESHOLD VOLTAGE;

HOT CARRIERS;

EID: 3042609607     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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