The application of polyimide/silicon nitride dual passivation to AlxGa1-xN/GaN high electron mobility transistors

Microelectronics Reliability

Volumn 48, Issue 2, 2008, Pages 187-192

  Lau, W S ^a   Gunawan, S ^a   Tan, Joy B H ^a   Singh, B P ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; DIFFUSION BARRIERS; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYIMIDES; SILICON NITRIDE;

BACK-SIDE LAPPING; POLYIMIDE PASSIVATION; SILICON NITRIDE FILMS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 44249115319     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.05.003     Document Type: Article

References (24)

1. Green B.M., Chu K.K., Chumbes E.M., Smart J.A., Sheal J.R., and Eastman L.F. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's. IEEE Electron Dev Lett 21 6 (2000) 268-270
2. Vertiatchikh A.V., Eastman L.F., Schaff W.J., and Prunty T. Effect of surface passivation of AlGaN/GaN heterostructure field-effect transistor. Electron Lett 38 8 (2002) 388-389
3. Lu W., Kumar V., Schwindt R., Piner E., and Adesida I. A comparative study of surface passivation on AlGaN/GaN HEMTs. Solid-State Electron 46 (2002) 1441-1444
4. Saito Y., Tosaka Y., and Nakajima S. Silicon nitride final passivation for GaAs metal semiconductor field effect transistors (MESFETs) packaged in plastic mold. Jpn J Appl Phys Part 2 42 11B (2003) L1391-L1393
5. Hampson M.D., Shen S.C., Schwindt R.S., Price R.K., Chowdhury U., Wong M.M., et al. Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz. IEEE Electron Dev Lett 25 5 (2004) 238-240
6. Djakaria R., Chandran B.I., Gordon M.H., and Schmidt W.F. Determination of Young's modulus of thin films used in embedded passive devices. Proc IEEE Electron Compon Technol Conf (1997) 745-749
7. Kaushik A., Kahn H., and Heuer A.H. Wafer-level mechanical characterization of silicon nitride MEMS. J Microelectromech Syst 14 2 (2005) 359-367
8. 4 films carried out on a silicon chip. Sens Actuators 82 2 (2000) 291-296
9. Wyant J.L., and Schuckert C.C. Qualification of a spin apply photodefinable polymer for packaging of automotive circuits. Solid State Technol 43 11 (2000) 125-130
10. Chung H., Lee J., Hwang J., and Han H. Mechanically stable copolyimide for low level stress buffer. Polymer 42 (2001) 7893-7901
11. Alford T.L., Zou Y.L., Gadre K.S., King C., Chen W., and Theodore N.D. Integration and electrical characterization of photosensitive polyimide. J Vac Sci Technol B 19 3 (2001) 774-779
12. Cho D.H., Shimizu M., Ide T., Shim B., and Okumura H. Improvement of AlGaN/GaN heterostructure field effect transistor characteristics by using two-step Ohmic contact process. Jpn J Appl Phys 42 4B (2003) 2309-2312
13. 2 chemistry for device isolation. Phys Status Solidi (c) 2 7 (2005) 2544-2547
14. 4 gate insulator. Jpn J Appl Phys 42 4B (2003) 2278-2280 Part 1
15. Hall S., and Schuckert C.C. Single mask wafer overcoat process using photodefinable polyimide. Solid State Technol 42 10 (1999) 95-96
16. Gaska R., Osinsky A., Yang J.W., and Shur M.S. Self-heating in high-power AlGaN/GaN HFET's. IEEE Electron Dev Lett 19 3 (1998) 89-91
17. Shur M.S. GaN based transistors for high power applications. Solid State Electron 42 12 (1998) 2131-2138
18. Zhang X., and Grigoropoulosa C.P. Thermal conductivity and diffusivity of free-standing silicon nitride thin films. Rev Sci Instrum 66 2 (1995) 1115-1120 Part 1
19. Kurabayashi K., Asheghi M., Touzelbaev M., and Goodson K.E. Measurement of the thermal conductivity anisotropy in polyimide films. IEEE J Microelectromech Syst 8 2 (1999) 180-191
20. Zhao Y., Zhu C., Wang S., Tian J.Z., Yang D.J., Chen C.K., et al. Pulsed photothermal reflectance measurement of the thermal conductivity of sputtered aluminum nitride thin films. J Appl Phys 96 8 (2004) 4563-4568
21. Kawamura T., Kangawa Y., and Kakimoto K. Investigation of thermal conductivity of GaN by molecular dynamics. J Crystal Growth 284 (2005) 197-202
22. Vodenitcharova T., Zhang L.C., Zarudi I., Yin Y., Domyo H., and Ho T. Transient thermal analysis of sapphire wafers subjected to thermal shocks. IEEE Trans Semicond Manuf 19 3 (2006) 292-297
23. Ren F., Pearton S.J., Lothian J.R., and Abernathy C.R. Fabrication of Y-gate submicron gate length GaAs metal-semiconductor field effect transistors. J Vac Sci Technol B 11 6 (1993) 2603-2606
24. Kanicki J., and Wagner P. Comparative study of PECVD nitride films. In: Kapoor V.J., and Hankins K.T. (Eds). Proceedings of the symposium on silicon nitride and silicon dioxide thin insulating films vols. 87-10 (1987), Electrochemical Society, Pennington, New Jersey, USA 261-274