Dry etching of AlxGa1-xN/GaN by CCl2F 2 chemistry for device isolation

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2544-2547

  Lau, W S ^a   Singh, B P ^a   Tan, Joy B H ^a   Gunawan, S ^a   Jiang, Y Y ^b   Wynn, Richard Thet ^b   Lim, Vanissa S W ^b   Trigg, A D ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ETCHING; FABRICATION; HIGH ELECTRON MOBILITY TRANSISTORS; SPUTTERING;

ALGANALGAN FILMS; ISOLATION MESA ETCH; RF POWER;

GALLIUM NITRIDE;

EID: 27344443032     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461324     Document Type: Conference Paper

References (12)

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