Silicon Nitride Final Passivation for GaAs Metal Semi-Conductor Field Effect Transistors (MESFETS) Packaged in Plastic Mold

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 11 B, 2003, Pages

  Saito, Yoshihiro ^a   Tosaka, Yasuhiro ^a   Nakajima, Shigeru ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

GaAs MESFET; Moisture resistance; PE CVD; Silicon nitride; Thin film

Indexed keywords

ELECTRONICS PACKAGING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; MOISTURE CONTROL; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASTICS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SILICON NITRIDE; STRESS ANALYSIS; SYNTHESIS (CHEMICAL); THIN FILMS;

CARRIER SYSTEMS; MOISTURE RESISTANCE;

MESFET DEVICES;

EID: 1642495743     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l1391     Document Type: Article

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