Improvement of AlGaN/GaN heterostructure field effect transistor characteristics by using two-step ohmic contact process

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 2309-2312

  Cho, Dong Hyun ^a,b,c   Shimizu, Mitsuaki ^a,c   Ide, Toshihide ^a,b,c   Shim, Byoungrho ^a   Okumura, Hajime ^a,c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b Advanced Power Device Laboratory   (Japan)

^c UPR   (Japan)

Author keywords

AlGaN; AlN; GaN; HFET; Two step ohmic contact

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLIZING; OHMIC CONTACTS; PLASMAS;

CONTACT RESISTANCE; TWO STEP OHMIC CONTACT PROCESS;

ALUMINUM NITRIDE;

EID: 0037671890     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2309     Document Type: Article

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