Transient thermal analysis of sapphire wafers subjected to thermal shocks

IEEE Transactions on Semiconductor Manufacturing

Volumn 19, Issue 3, 2006, Pages 292-297

  Vodenitcharova, T ^a   Zhang, L C ^a   Zarudi, I ^a   Yin, Y ^a   Domyo, H ^b   Ho, T ^b  

^a UNIVERSITY OF SYDNEY   (Australia)

^b Peregrine Semiconductor   (United States)

Author keywords

Sapphire; Silicon; Thermal shock; Wafer

Indexed keywords

COOLING; HEATING; INTEGRATED CIRCUITS; MATHEMATICAL MODELS; SAPPHIRE; THERMAL EFFECTS; THERMAL STRESS; THERMOANALYSIS;

PARABOLIC RADIAL TEMPERATURE DISTRIBUTION; SAPPHIRE WAFERS; THERMAL LOADING; THERMAL SHOCK;

SILICON WAFERS;

EID: 33747394078     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2006.879419     Document Type: Article

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