Sensitivity of frequency characteristics of semiconductor devices to random doping fluctuations

Solid-State Electronics

Volumn 48, Issue 1, 2004, Pages 133-141

  Andrei, Petru ^a   Mayergoyz, Isaak ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

Fluctuations; Frequency characteristics; MOSFET; Numerical analysis; Random doping distribution

Indexed keywords

COMPUTATIONAL METHODS; DOPING (ADDITIVES); FREQUENCIES; SENSITIVITY ANALYSIS;

RANDOM DOPING FLUCTUATIONS;

MOSFET DEVICES;

EID: 0142185187     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00266-1     Document Type: Article

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