Numerical analysis of random dopant-induced effects in semiconductor devices

International Journal of High Speed Electronics and Systems

Volumn 12, Issue 2, 2002, Pages 551-562

  Mayergoyz, I D ^a   Andrei, P ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

Doping fluctuations; MOSFETs; Small signal parameters variance; Threshold voltage variances

Indexed keywords

DIFFUSION; FREQUENCY RESPONSE; ION IMPLANTATION; MICROPROCESSOR CHIPS; NUMERICAL ANALYSIS; OXIDES; SEMICONDUCTOR DOPING; STATISTICAL METHODS; THRESHOLD VOLTAGE;

DOPING FLUCTUATIONS; SMALL SIGNAL PARAMETERS VARIANCE; THRESHOLD VOLTAGE VARIANCES;

MOSFET DEVICES;

EID: 0042067124     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156402001204     Document Type: Conference Paper

References (11)

1. A. Asenov, IEEE Trans. Electron, Devices 45 (1998) 2505.
2. H. S. Wong and Y. Taur, IEEE IEDM Tech. Dig. (1993) 705.
3. A. Asenov, A. R. Brown, J. H. Davies, and S. Saini, IEEE Trans. Electron. Devices 18 (1999) 1558.
4. I. D. Mayergoyz and P. Andrei, J. Appl. Phys. 90 (2001) 6.
5. S. Selberherr, Analysis and Simulation of Semiconductor Devices, Springer-Verlag, 1984.
6. I. D. Mayergoyz, J. Appl. Phys. 59 (1986) 195.
7. C. E. Korman and I. D. Mayergoyz, J. Appl. Phys. 68 (1990) 1324.
8. M. Lundrstrom, Fundamentals of Carrier Transport, Addison-Wesley, 1990.
9. S. P. Singh, N. Goldsman, and I. D. Mayergoyz, Solid-State Electron. 39 (1996) 1695.
10. P. A. Markowich, C. A. Ringhofer, and C. Schmeiser, Semiconductor Equations, Springer-Verlag, 1990.
11. A. Asenov and S. Saini, IEEE Trans. Electron. Devices 46 (1999) 1718.