Random dopant fluctuation modelling with the impedance field method

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2003-January, Issue , 2003, Pages 91-94

  Wettstein, A ^a   Penzin, O ^b   Lyumkis, E ^b   Fichtner, W ^c  

^a SYNOPSYS SWITZERLAND LLC   (Switzerland)

^b Integrated Systems Inc   (United States)

^c ETH ZURICH   (Switzerland)

Author keywords

Doping; Electrons; Equations; Fluctuations; Impedance; Microscopy; Semiconductor process modeling; Statistical analysis; Systems engineering and theory; Temperature

Indexed keywords

DOPING (ADDITIVES); ELECTRIC IMPEDANCE; ELECTRONS; MICROSCOPIC EXAMINATION; SEMICONDUCTOR DOPING; STATISTICAL METHODS; TEMPERATURE;

EQUATIONS; FIELD METHODS; FLUCTUATIONS; ORDERS OF MAGNITUDE; RANDOM DOPANT FLUCTUATION; SEMICONDUCTOR PROCESS MODELING; SYSTEMS ENGINEERING AND THEORIES;

SEMICONDUCTOR DEVICES;

EID: 84943262034     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2003.1233645     Document Type: Conference Paper

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