Random doping-induced fluctuations of subthreshold characteristics in MOSFET devices

Solid-State Electronics

Volumn 47, Issue 11, 2003, Pages 2055-2061

  Andrei, Petru ^a   Mayergoyz, Isaak ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

Fluctuations; Mismatch; MOSFET; Sensitivity analysis; Statistics; Submicron devices

Indexed keywords

DOPING (ADDITIVES); ELECTRIC POTENTIAL; NETWORKS (CIRCUITS); STATISTICAL METHODS;

GATE-VOLTAGE SWING;

MOSFET DEVICES;

EID: 0042229214     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00236-3     Document Type: Article

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