ALD of Ta(Si)N thin films using TDMAS as a reducing agent and as a Si precursor

Journal of the Electrochemical Society

Volumn 151, Issue 8, 2004, Pages

  Alén, Petra ^a   Aaltonen, Titta ^a   Ritala, Mikko ^a   Leskelä, Markku ^a   Sajavaara, Timo ^a   Keinonen, Juhani ^a   Hooker, Jacob C ^b   Maes, Jan Willem ^c  

^a UNIVERSITY OF HELSINKI   (Finland)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c ASM BELGIUM   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

FOUR-POINT PROBE METHOD; PRECURSORS; REDUCING AGENTS; TIME-OF-FLIGHT ELASTIC RECOIL DETECTION ANALYSIS;

DEPOSITION; ENERGY DISPERSIVE SPECTROSCOPY; INTERFACES (MATERIALS); OPTIMIZATION; REDUCTION; SILICON; STOICHIOMETRY; X RAY DIFFRACTION;

THIN FILMS;

EID: 4344657041     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1768547     Document Type: Article

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