Thermal stability of TaSixNy films deposited by reactive sputtering on SiO2

Journal of the Electrochemical Society

Volumn 150, Issue 5, 2003, Pages

  Suh, You Seok ^a   Heuss, Greg P ^a,c   Misra, Veena ^a   Park, Dae Gyu ^b,d   Lim, Kwan Yong ^b  

^a North Carolina State University   (United States)

^b Hynix Semiconductor Inc   (South Korea)

^c INTEL CORPORATION   (United States)

^d IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; LEAKAGE CURRENTS; NITROGEN; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SPUTTERING; SURFACE ROUGHNESS; TEMPERATURE; THERMODYNAMIC STABILITY; THIN FILMS;

EQUIVALENT OXIDE THICKNESS; METAL INSULATOR SEMICONDUCTOR STRUCTURE; REACTIVE SPUTTERING;

TANTALUM COMPOUNDS;

EID: 0037840451     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1562599     Document Type: Article

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