Study of Ta-Si-N thin films for use as barrier layer in copper metallizations

Microelectronic Engineering

Volumn 50, Issue 1-4, 2000, Pages 459-464

  Fischer, D ^a   Scherg, T ^b   Bauer, J G ^b   Schulze, H J ^b   Wenzel, C ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; AMORPHOUS FILMS; ANNEALING; COPPER; GRAIN SIZE AND SHAPE; INTERDIFFUSION (SOLIDS); METALLIZING; NANOSTRUCTURED MATERIALS; SPUTTER DEPOSITION; TANTALUM COMPOUNDS; THERMODYNAMIC STABILITY; THIN FILMS;

BARRIER LAYERS; MICROANALYTICAL CHARACTERIZATION;

SEMICONDUCTING FILMS;

EID: 0033640178     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00315-9     Document Type: Article

References (5)

1. Nicolet M.-A. Diffusion barriers in thin films. Thin Solid Films. 52:1978;415-443.
2. Stavrev M., Fischer D., Wenzel C., Drescher K., Mattern N. Crystallographic and morphological characterization of reactively sputtered Ta, Ta-N and Ta-N-O thin films. Thin Solid Films. 307:1997;79-89.
3. Reid J.S., Kolawa E., Ruiz R.P., Nicolet M.-A. Evaluation of amorphous (Mo, Ta, W)-Si-N diffusion barriers for 〈Si〉Cu metallizations. Thin Solid Films. 236:1993;319-324.
4. Fischer D., Stavrev M., Urbansky N., Wenzel C., Bauer J.G., Scherg T., Schulze H.-J. Barrier and Contact Behaviour of Tantalum-based Thin Films for Use in Copper Metallization Scheme. Proceedings AMC 1998, October 6-8, Colorado Springs :1999.
5. Lee Y.J., Suh B.-S., Kwon M.S., Park C.-O. Barrier properties and failure mechanism of Ta-Si-N thin films for Cu interconnection. J. Appl. Phys. 85:1999;1927-1934.