Post-annealing temperature dependence of blistering in high-fluence ion-implanted H in Si 〈1 0 0〉

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 266, Issue 8, 2008, Pages 1349-1355

  Liang, J H ^a   Bai, C Y ^a   Chao, D S ^a   Lin, C M ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Blister; Crater; Damage; Defect complex; Gettering; Ion implantation; Silicon on insulator; Smart cut

Indexed keywords

ANNEALING; ION IMPLANTATION; OPTICAL MICROSCOPY; RAMAN SCATTERING; SILICON ON INSULATOR TECHNOLOGY; SURFACE DEFECTS;

BLISTERS; CRATER; DEFECT COMPLEX; GETTERING; SMART CUT;

SEMICONDUCTING SILICON;

EID: 43049162182     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.11.045     Document Type: Article

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