Formation of hydrogen complexes in proton implanted silicon and their influence on the crystal damage

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 242, Issue 1-2, 2006, Pages 623-626

  Hochbauer T ^a   Misra, A ^a   Nastasi, M ^a   Mayer, J W ^b   Ensinger, W ^c  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

Implantation; Ion cut; Silicon on insulator

Indexed keywords

ANNEALING; COMPLEXATION; CRYSTALS; HYDROGEN; ION IMPLANTATION; PROTONS; SILICON ON INSULATOR TECHNOLOGY; TRANSMISSION ELECTRON MICROSCOPY;

DAMAGE ACCUMULATION; IMPLANTATION; ION-CUT; SILICON ON INSULATOR;

SILICON;

EID: 28544440388     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.08.141     Document Type: Conference Paper

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