Damage characteristics of low-temperature BSi molecular ion implantation in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 257, Issue 1-2 SPEC. ISS., 2007, Pages 190-194

  Liang, J H ^a   Wang, S C ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Amorphous; Crystalline; Damage; Molecular ion implantation; Raman scattering spectroscopy; Rapid thermal annealing

Indexed keywords

CODES (SYMBOLS); MONTE CARLO METHODS; RAMAN SCATTERING; RAPID THERMAL ANNEALING; SEMICONDUCTING BORON; SILICON;

DAMAGE CHARACTERISTICS; PEAK INTENSITY; PEAK POSITION; TRANSVERSE OPTICAL PHONON RAMAN PEAKS;

ION IMPLANTATION;

EID: 33947672779     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.01.002     Document Type: Article

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