Characterization of BSi molecular ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 206, Issue , 2003, Pages 932-936

  Liang, J H ^a   Chiang, S L ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Defect; Molecular ion implantation; Rapid thermal annealing; Shallow junction; Sheet resistance

Indexed keywords

CRYSTAL DEFECTS; RAPID THERMAL ANNEALING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

SHALLOW JUNCTIONS;

ION IMPLANTATION;

EID: 0038750842     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)00864-4     Document Type: Conference Paper

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