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Materials Science and Engineering: B

Volumn 124-125, Issue SUPPL., 2005, Pages 162-165

Investigation of hydrogen implantation-induced blistering in SiGe

(7) Singh, R a Radu, I a Reiche, M a Scholz, R a Webb, D b Gosele U a Christiansen, S H a

a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

b INFINEON TECHNOLOGIES AG (Germany)

Author keywords

Implantation induced blistering; Reduced pressure chemical vapour deposition; Transmission electron microscopy

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; HYDROGEN; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SURFACE PHENOMENA; TEMPERATURE DISTRIBUTION; TRANSMISSION ELECTRON MICROSCOPY;

IMPLANTATION-INDUCED BLISTERING; REDUCED PRESSURE CHEMICAL VAPOR DEPOSITION; STRAIN-RELAXED; TEMPERATURE RANGE;

ION IMPLANTATION;

EID: 27844544176 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2005.08.022 Document Type: Conference Paper

Times cited : (19)

References (18)

1
- 19944433396
- M.L. Le, E.A. Fitzgerald, M.T. Bulsara, M.T. Currie, and A. Lochtefeld J. Appl. Phys. 97 2005 011101
- (2005) J. Appl. Phys. , vol.97 , pp. 011101
- Le, M.L.¹ Fitzgerald, E.A.² Bulsara, M.T.³ Currie, M.T.⁴ Lochtefeld, A.⁵

2
- 1442360367
- C. Maleville, and C. Mazure Solid State Electron. 48 2004 1055
- (2004) Solid State Electron. , vol.48 , pp. 1055
- Maleville, C.¹ Mazure, C.²

3
- 0001115040
- L.J. Huang, J.O. Chu, D.F. Canaperi, C.P. D'Emic, R.M. Anderson, S.J. Koester, and H.-S.P. Wong Appl. Phys. Lett. 78 2001 1267
- (2001) Appl. Phys. Lett. , vol.78 , pp. 1267
- Huang, L.J.¹ Chu, J.O.² Canaperi, D.F.³ D'Emic, C.P.⁴ Anderson, R.M.⁵ Koester, S.J.⁶ Wong, H.-S.P.⁷

4
- 0842268423
- G. Taraschi, A.J. Pitera, L.M. McGill, Z.Y. Cheng, M.L. Lee, T.A. Langdo, and E.A. Fitzgerald J. Electrochem. Soc. 151 2004 47
- (2004) J. Electrochem. Soc. , vol.151 , pp. 47
- Taraschi, G.¹ Pitera, A.J.² McGill, L.M.³ Cheng, Z.Y.⁴ Lee, M.L.⁵ Langdo, T.A.⁶ Fitzgerald, E.A.⁷

5
- 13244259536
- S.H. Christiansen, R. Singh, I. Radu, M. Reiche, U. Gösele, D. Webb, S. Bukalo, and B. Dietrich Mater. Sci. Semicond. Process. 8 2005 197
- (2005) Mater. Sci. Semicond. Process. , vol.8 , pp. 197
- Christiansen, S.H.¹ Singh, R.² Radu, I.³ Reiche, M.⁴ Gösele, U.⁵ Webb, D.⁶ Bukalo, S.⁷ Dietrich, B.⁸

6
- 0342727389
- M.K. Weldon, V.E. Marsico, Y.J. Chabal, A. Agarwal, D.J. Eaglesham, J. Sapjeta, W.L. Brown, D.C. Jacobson, Y. Caudano, S.B. Christman, and E.E. Chaban J. Vac. Sci. Technol. B 15 1997 1065
- (1997) J. Vac. Sci. Technol. B , vol.15 , pp. 1065
- Weldon, M.K.¹ Marsico, V.E.² Chabal, Y.J.³ Agarwal, A.⁴ Eaglesham, D.J.⁵ Sapjeta, J.⁶ Brown, W.L.⁷ Jacobson, D.C.⁸ Caudano, Y.⁹ Christman, S.B.¹⁰ Chaban, E.E.¹¹

7
- 0040582112
- T. Höchbauer, M. Nastasi, and J.W. Mayer Appl. Phys. Lett. 75 1999 3938
- (1999) Appl. Phys. Lett. , vol.75 , pp. 3938
- Höchbauer, T.¹ Nastasi, M.² Mayer, J.W.³

8
- 0035356819
- T. Höchbauer, A. Misra, M. Nastasi, and J.W. Mayer J. Appl. Phys. 89 2001 5980
- (2001) J. Appl. Phys. , vol.89 , pp. 5980
- Höchbauer, T.¹ Misra, A.² Nastasi, M.³ Mayer, J.W.⁴

9
- 0001381291
- Y. Zheng, S.S. Lau, T. Höchbauer, A. Misra, R. Verda, X.-M. He, M. Nastasi, and J.W. Mayer J. Appl. Phys. 89 2001 2972
- (2001) J. Appl. Phys. , vol.89 , pp. 2972
- Zheng, Y.¹ Lau, S.S.² Höchbauer, T.³ Misra, A.⁴ Verda, R.⁵ He, X.-M.⁶ Nastasi, M.⁷ Mayer, J.W.⁸

10
- 0035424207
- S.W. Bedell, and W.A. Lanford J. Appl. Phys. 90 2001 1138
- (2001) J. Appl. Phys. , vol.90 , pp. 1138
- Bedell, S.W.¹ Lanford, W.A.²

11
- 0000268706
- Q.-Y. Tong, K. Gutjahr, S. Hopfe, U. Gösele, and T.H. Lee Appl. Phys. Lett. 70 1997 1390
- (1997) Appl. Phys. Lett. , vol.70 , pp. 1390
- Tong, Q.-Y.¹ Gutjahr, K.² Hopfe, S.³ Gösele, U.⁴ Lee, T.H.⁵

12
- 0035883774
- C.W. Leitz, M.T. Currie, A.Y. Kim, J. Lai, E. Robbins, E.A. Fitzgerald, and M.T. Bulsara J. Appl. Phys. 90 2001 2730
- (2001) J. Appl. Phys. , vol.90 , pp. 2730
- Leitz, C.W.¹ Currie, M.T.² Kim, A.Y.³ Lai, J.⁴ Robbins, E.⁵ Fitzgerald, E.A.⁶ Bulsara, M.T.⁷

13
- 0001161041
- L.-J. Huang, Q.-Y. Tong, Y.-L. Caho, T.-H. Lee, T. Martini, and U. Gösele Appl. Phys. Lett. 74 1999 982
- (1999) Appl. Phys. Lett. , vol.74 , pp. 982
- Huang, L.-J.¹ Tong, Q.-Y.² Caho, Y.-L.³ Lee, T.-H.⁴ Martini, T.⁵ Gösele, U.⁶

14
- 0003412161
- Pergamon New York
- J.F. Ziegler, J.B. Biersack, and U. Littmark The Stopping and Range of Ions in Solids 1985 Pergamon New York
- (1985) The Stopping and Range of Ions in Solids
- Ziegler, J.F.¹ Biersack, J.B.² Littmark, U.³

15
- 0001157714
- C.M. Varma Appl. Phys. Lett. 71 1997 3519
- (1997) Appl. Phys. Lett. , vol.71 , pp. 3519
- Varma, C.M.¹

16
- 0039331932
- M. Bruel Nucl. Instrum. Methods Phys. Rev. B 108 1996 313
- (1996) Nucl. Instrum. Methods Phys. Rev. B , vol.108 , pp. 313
- Bruel, M.¹

17
- 3042848720
- Springer Verlag
- M. Alexe U. Gösele Wafer Bonding: Applications and Technology 2004 Springer Verlag 94
- (2004) Wafer Bonding: Applications and Technology , pp. 94
- Alexe, M.¹ Gösele, U.²

18
- 0026137703
- S.J. Pearton, J.W. Corbett, and J.T. Borenstein Physica B 170 1991 85
- (1991) Physica B , vol.170 , pp. 85
- Pearton, S.J.¹ Corbett, J.W.² Borenstein, J.T.³

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