-
1
-
-
0035278799
-
-
S. C. Binari, K. Ikossi-Anastasiou, J. A. Roussos, W. Kruppa, D. Park, H. B. Dietrich, D. D. Koleske, A. E. Wickenden, and R. L. Henry, IEEE Trans. Electron Devices 48, 465 (2001).
-
(2001)
IEEE Trans. Electron Devices
, vol.48
, pp. 465
-
-
Binari, S.C.1
Ikossi-Anastasiou, K.2
Roussos, J.A.3
Kruppa, W.4
Park, D.5
Dietrich, H.B.6
Koleske, D.D.7
Wickenden, A.E.8
Henry, R.L.9
-
2
-
-
0036721744
-
-
W. Lu, V. Kumar, R. Schwindt, E. Piner, and I. Adesida, Solid-State Electron. 46, 1441 (2002).
-
(2002)
Solid-State Electron.
, vol.46
, pp. 1441
-
-
Lu, W.1
Kumar, V.2
Schwindt, R.3
Piner, E.4
Adesida, I.5
-
3
-
-
0037370339
-
-
J. R. Shealy, T. R. Prunty, E. M. Chumbes, and B. K. Ridley, J. Cryst. Growth 250, 7 (2003).
-
(2003)
J. Cryst. Growth
, vol.250
, pp. 7
-
-
Shealy, J.R.1
Prunty, T.R.2
Chumbes, E.M.3
Ridley, B.K.4
-
4
-
-
1242285005
-
-
S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo, and Y. Sano, Appl. Phys. Lett. 84, 613 (2004).
-
(2004)
Appl. Phys. Lett.
, vol.84
, pp. 613
-
-
Arulkumaran, S.1
Egawa, T.2
Ishikawa, H.3
Jimbo, T.4
Sano, Y.5
-
5
-
-
33846882150
-
-
P. Kordos, P. Kudela, D. Gergusova, and D. Donoval, Semicond. Sci. Technol. 21, 1592 (2006).
-
(2006)
Semicond. Sci. Technol.
, vol.21
, pp. 1592
-
-
Kordos, P.1
Kudela, P.2
Gergusova, D.3
Donoval, D.4
-
6
-
-
33845928175
-
-
D. J. Chen, Y. Q. Tao, C. Chen, R. Zhang, Y. D. Zheng, M. J. Wang, B. Shen, Z. H. Li, G. Jiao, and T. S. Chen, Appl. Phys. Lett. 89, 252104 (2006).
-
(2006)
Appl. Phys. Lett.
, vol.89
, pp. 252104
-
-
Chen, D.J.1
Tao, Y.Q.2
Chen, C.3
Zhang, R.4
Zheng, Y.D.5
Wang, M.J.6
Shen, B.7
Li, Z.H.8
Jiao, G.9
Chen, T.S.10
-
7
-
-
34248682740
-
-
N. Maeda, M. Hiroki, N. Watanabe, Y. Oda, H. Yokoyama, T. Yagi, T. Makimoto, T. Enoki, and T. Kobayashi, Jpn. J. Appl. Phys., Part 1 46, 547 (2007).
-
(2007)
Jpn. J. Appl. Phys., Part 1
, vol.46
, pp. 547
-
-
Maeda, N.1
Hiroki, M.2
Watanabe, N.3
Oda, Y.4
Yokoyama, H.5
Yagi, T.6
Makimoto, T.7
Enoki, T.8
Kobayashi, T.9
-
8
-
-
22544451237
-
-
S. Arulkumaran, T. Egawa, and H. Ishigawa, Jpn. J. Appl. Phys., Part 1 44, 2953 (2005).
-
(2005)
Jpn. J. Appl. Phys., Part 1
, vol.44
, pp. 2953
-
-
Arulkumaran, S.1
Egawa, T.2
Ishigawa, H.3
-
9
-
-
33845928175
-
-
D. J. Chen, Y. Q. Tao, C. Chen, R. Zhang, Y. D. Zheng, M. J. Wang, B. Shen, Z. H. Li, G. Jiao, and T. S. Chen, Appl. Phys. Lett. 89, 252104 (2006).
-
(2006)
Appl. Phys. Lett.
, vol.89
, pp. 252104
-
-
Chen, D.J.1
Tao, Y.Q.2
Chen, C.3
Zhang, R.4
Zheng, Y.D.5
Wang, M.J.6
Shen, B.7
Li, Z.H.8
Jiao, G.9
Chen, T.S.10
-
10
-
-
0036806424
-
-
R. Coffie, D. Buttari, S. Heikman, S. Keller, A. Chini, L. Chen, and U. K. Mishra, IEEE Electron Device Lett. 23, 588 (2002).
-
(2002)
IEEE Electron Device Lett.
, vol.23
, pp. 588
-
-
Coffie, R.1
Buttari, D.2
Heikman, S.3
Keller, S.4
Chini, A.5
Chen, L.6
Mishra, U.K.7
-
12
-
-
33645974309
-
-
W. Wang, J. Derluyn, M. Germain, M. Leys, S. Degroote, D. Schreurs, and G. Borghs, Jpn. J. Appl. Phys., Part 2 45, L224 (2006).
-
(2006)
Jpn. J. Appl. Phys., Part 2
, vol.45
, pp. 224
-
-
Wang, W.1
Derluyn, J.2
Germain, M.3
Leys, M.4
Degroote, S.5
Schreurs, D.6
Borghs, G.7
-
13
-
-
33747345636
-
-
M. Higashiwaki, N. Onojima, T. Matsui, and T. Mimura, J. Appl. Phys. 100, 033714 (2006).
-
(2006)
J. Appl. Phys.
, vol.100
, pp. 033714
-
-
Higashiwaki, M.1
Onojima, N.2
Matsui, T.3
Mimura, T.4
-
14
-
-
11044219719
-
-
Z. H. Feng, Y. G. Zhou, S. J. Cai, and K. M. Lau, Appl. Phys. Lett. 85, 5248 (2004).
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 5248
-
-
Feng, Z.H.1
Zhou, Y.G.2
Cai, S.J.3
Lau, K.M.4
-
15
-
-
17644411450
-
-
A. P. Edwards, J. A. Mittereder, S. C. Binari, D. S. Katzer, D. F. Sotrm, and J. A. Roussos, IEEE Electron Device Lett. 26, 225 (2005).
-
(2005)
IEEE Electron Device Lett.
, vol.26
, pp. 225
-
-
Edwards, A.P.1
Mittereder, J.A.2
Binari, S.C.3
Katzer, D.S.4
Sotrm, D.F.5
Roussos, J.A.6
-
16
-
-
27744511519
-
-
Y. Guhel, B. Boudart, N. Vellas, C. Gaguiere, E. Delos, D. Ducatteau, Z. Bougrioua, and M. Germain, Solid-State Electron. 49, 1589 (2005).
-
(2005)
Solid-State Electron.
, vol.49
, pp. 1589
-
-
Guhel, Y.1
Boudart, B.2
Vellas, N.3
Gaguiere, C.4
Delos, E.5
Ducatteau, D.6
Bougrioua, Z.7
Germain, M.8
-
17
-
-
43049128804
-
-
Radiation Resistance of GaAs-Based Microwave Schottky-Barrier Devices (Interpress Ltd., Kiev),.
-
A. E. Belyaev, J. Breza, E. F. Venger, M. Vesely, I. Yu. Il'in, R. V. Konakova, J. Linday, V. G. Lypin, V. V. Milenin, I. V. prokopenko, and Yu. A. Thorik, Radiation Resistance of GaAs-Based Microwave Schottky-Barrier Devices (Interpress Ltd., Kiev, 1998), p. 129.
-
(1998)
, pp. 129
-
-
Belyaev, A.E.1
Breza, J.2
Venger, E.F.3
Vesely, M.4
Il'In, I.Yu.5
Konakova, R.V.6
Linday, J.7
Lypin, V.G.8
Milenin, V.V.9
Prokopenko, I.V.10
Thorik, Yu.A.11
-
18
-
-
0036453202
-
-
Defect and Impurity Engineered Semiconductors and Devices III, MRS Symposia Proceedings No. 719 (Materials Research Society, Pittsburgh),.
-
S. A. Vitusevich, N. Klein, A. E. Belyaev, S. V. Danylyuk, M. V. Petrychuk, R. V. Konakova, A. M. Kurakin, A. E. Rengevich, A. Yu. Avksentyev, B. A. Danilchenko, V. Tilak, J. Smart, A. Vertiatchikh, and L. F. Eastman, Defect and Impurity Engineered Semiconductors and Devices III, MRS Symposia Proceedings No. 719 (Materials Research Society, Pittsburgh, 2002), p. 33.
-
(2002)
, pp. 33
-
-
Vitusevich, S.A.1
Klein, N.2
Belyaev, A.E.3
Danylyuk, S.V.4
Petrychuk, M.V.5
Konakova, R.V.6
Kurakin, A.M.7
Rengevich, A.E.8
Avksentyev, A.Yu.9
Danilchenko, B.A.10
Tilak, V.11
Smart, J.12
Vertiatchikh, A.13
Eastman, L.F.14
-
19
-
-
0037279753
-
-
S. A. Vitusevich, N. Klein, A. E. Belyaev, S. V. Danylyuk, M. V. Petrychuk, R. V. Konakova, A. M. Kurakin, A. E. Rengevich, A. Yu. Avksentyev, B. A. Danilchenko, V. Tilak, J. Smart, A. Vertiatchikh, and L. F. Eastman, Phys. Status Solidi A 195, 101 (2003).
-
(2003)
Phys. Status Solidi A
, vol.195
, pp. 101
-
-
Vitusevich, S.A.1
Klein, N.2
Belyaev, A.E.3
Danylyuk, S.V.4
Petrychuk, M.V.5
Konakova, R.V.6
Kurakin, A.M.7
Rengevich, A.E.8
Avksentyev, A.Yu.9
Danilchenko, B.A.10
Tilak, V.11
Smart, J.12
Vertiatchikh, A.13
Eastman, L.F.14
-
20
-
-
0345359254
-
-
New Applications for Wide-BandgaSemiconductors, MRS Symposia Proceedings No. 764 (Materials Research Society, Pittsburgh),.
-
S. A. Vitusevich, M. V. Petrychuk, N. Klein, S. V. Danylyuk, A. E. Belyaev, R. V. Konakova, A. Yu. Avksentyev, A. M. Kurakin, P. M. Lytvyn, B. A. Danilchenko, V. Tilak, J. Smart, A. Vertiatchikh, and L. F. Eastman, New Applications for Wide-Bandgap Semiconductors, MRS Symposia Proceedings No. 764 (Materials Research Society, Pittsburgh, 2003), p. 183.
-
(2003)
, pp. 183
-
-
Vitusevich, S.A.1
Petrychuk, M.V.2
Klein, N.3
Danylyuk, S.V.4
Belyaev, A.E.5
Konakova, R.V.6
Avksentyev, A.Yu.7
Kurakin, A.M.8
Lytvyn, P.M.9
Danilchenko, B.A.10
Tilak, V.11
Smart, J.12
Vertiatchikh, A.13
Eastman, L.F.14
-
22
-
-
0000352669
-
-
D. G. Polyakov, F. Evers, A. D. Mirlin, and P. Woelfle, Phys. Rev. B 64, 205306 (2001).
-
(2001)
Phys. Rev. B
, vol.64
, pp. 205306
-
-
Polyakov, D.G.1
Evers, F.2
Mirlin, A.D.3
Woelfle, P.4
-
23
-
-
0000703073
-
-
A. F. Brana, C. Diaz-Paniagua, F. Batallan, J. A. Garrido, E. Munoz, and F. Omnes, J. Appl. Phys. 88, 932 (2000).
-
(2000)
J. Appl. Phys.
, vol.88
, pp. 932
-
-
Brana, A.F.1
Diaz-Paniagua, C.2
Batallan, F.3
Garrido, J.A.4
Munoz, E.5
Omnes, F.6
-
25
-
-
25744461367
-
-
B. L. Altshuler, D. Khmelnitzkii, A. I. Larkin, and P. A. Lee, Phys. Rev. B 22, 5142 (1980).
-
(1980)
Phys. Rev. B
, vol.22
, pp. 5142
-
-
Altshuler, B.L.1
Khmelnitzkii, D.2
Larkin, A.I.3
Lee, P.A.4
-
29
-
-
39249084679
-
-
A. D. Mirlin, D. G. Polyakov, F. Evers, and P. Wölfle, Phys. Rev. Lett. 87, 126805 (2001).
-
(2001)
Phys. Rev. Lett.
, vol.87
, pp. 126805
-
-
Mirlin, A.D.1
Polyakov, D.G.2
Evers, F.3
Wölfle, P.4
-
31
-
-
28244495896
-
-
H.-I. Cho, G. M. Gusev, Z. D. Kvon, V. T. Renard, J.-H. Lee, and J.-C. Portal, Phys. Rev. B 71, 245323 (2005).
-
(2005)
Phys. Rev. B
, vol.71
, pp. 245323
-
-
Cho, H.-I.1
Gusev, G.M.2
Kvon, Z.D.3
Renard, V.T.4
Lee, J.-H.5
Portal, J.-C.6
-
35
-
-
33750026955
-
-
N. Tang, B. Shen, K. Han, Z. J. Yang, K. Xu, G. Y. Zhang, T. Lin, B. Zhu, W. Z. Zhou, L. Y. Shang, S. L. Guo, and J. H. Chu, J. Appl. Phys. 100, 073704 (2006).
-
(2006)
J. Appl. Phys.
, vol.100
, pp. 073704
-
-
Tang, N.1
Shen, B.2
Han, K.3
Yang, Z.J.4
Xu, K.5
Zhang, G.Y.6
Lin, T.7
Zhu, B.8
Zhou, W.Z.9
Shang, L.Y.10
Guo, S.L.11
Chu, J.H.12
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