Enhanced thermal stability of the two-dimensional electron gas in GaN/AlGaN/GaN heterostructures by Si3N4 surface-passivation-induced strain solidification

Applied Physics Letters

Volumn 85, Issue 22, 2004, Pages 5248-5250

  Feng, Z H ^a   Zhou, Y G ^a   Cai, S J ^a   Lau, Kei May ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON GAS; ELECTRON MOBILITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; STRAIN; TWO DIMENSIONAL; X RAY DIFFRACTION;

ALGAN; STRAIN RELAXATION; STRAIN SOLIDIFICATION; TWO-DIMENSIONAL ELECTRON GAS;

GALLIUM NITRIDE;

EID: 11044219719     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1828231     Document Type: Article

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