The effect of passivation on the performance of AlGaN/GaN heterostructure field-effect transistors

Semiconductor Science and Technology

Volumn 21, Issue 12, 2006, Pages 1592-1596

  Kordos P ^a,b   Kudela P ^a   Gregusova D ^b   Donoval, D ^a  

^a SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^b INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

INTEGRATION TIME; PASSIVATION INTERFACES; SURFACE STATES;

HETEROJUNCTIONS;

EID: 33846882150     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/12/015     Document Type: Article

References (16)

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