Barrier material improvement in AlGaN/GaN microwave transistors under gamma irradiation treatment

Materials Research Society Symposium - Proceedings

Volumn 764, Issue , 2003, Pages 183-188

  Vitusevich, S A ^a   Petrychuk, M V ^b   Klein, N ^a   Danylyuk, S V ^a   Belyaev, A E ^c   Konakova, R V ^c   Avksentyev, A Yu ^c   Kurakin, A M ^c   Lytvyn, P M ^c   Danilchenko, B A ^c   Tilak, V ^d   Smart, J ^d   Vertiatchikh, A ^d   Eastman, L F ^d  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV   (Ukraine)

^c INSTITUTE OF HYDROBIOLOGY   (Ukraine)

^d Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; GALLIUM NITRIDE; GAMMA RAYS; GROWTH (MATERIALS); HETEROJUNCTIONS; IRRADIATION; LEAKAGE CURRENTS; MICROWAVE DEVICES; TRANSISTORS; X RAY DIFFRACTION ANALYSIS;

BARRIER LAYERS; ELASTIC STRAINS; ELECTRICAL CHARACTERISTICS; RADIATION TREATMENT;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0345359254     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-764-c3.31     Document Type: Conference Paper

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