Effects of γ-irradiation on AlGaN/GaN-based HEMTs

Physica Status Solidi (A) Applied Research

Volumn 195, Issue 1 SPEC, 2003, Pages 101-105

  Vitusevich, S A ^a,b   Klein, N ^a   Belyaev, A E ^a,b   Danylyuk, S V ^a,b   Petrychuk, M V ^b   Konakova, R V ^b   Kurakin, A M ^b   Rengevich, A E ^b   Avksentyev, A Yu ^b   Danilchenko, B A ^c   Tilak, V ^d   Smart, J ^d   Vertiatchikh, A ^d   Eastman, L F ^d  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c INSTITUTE OF HYDROBIOLOGY   (Ukraine)

^d Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE; GAMMA RAYS; IRRADIATION; SEMICONDUCTING ALUMINUM COMPOUNDS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

CHANNEL CONDUCTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037279753     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306264     Document Type: Conference Paper

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