The effect of mechanical stress from stopping nitride to the reliability of tunnel oxide and data retention characteristics of NAND FLASH memory

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 257-259

  Om, Jaechul ^a   Choi, Eunseok ^a   Kim, Sejun ^a   Lee, Heegee ^a   Kim, Yongwook ^a   Chang, Heehyun ^a   Park, Sungki ^a   Bae, Gihyun ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

Charge trapping; Data retention; Interface states; Mechanical stress; NAND FLASH memory; Tunnel oxide; VFB shift

Indexed keywords

CHARGE TRAPPING; DATA RETENTION; INTERFACE STATES; MECHANICAL STRESS; NAND FLASH MEMORY; TUNNEL OXIDES; VFB SHIFT;

DATA REDUCTION; ELECTRIC CHARGE; INTERFACES (MATERIALS); LEAKAGE CURRENTS; NAND CIRCUITS; NITRIDES; OXIDATION; RELIABILITY; STRESS ANALYSIS;

FLASH MEMORY;

EID: 28744441437     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. J.D. Lee et al, "Degradation of tunnel oxide by FN current stress and its effects on data retention characteristics of 90nm NAND FLASH memory" in Proceedings of the IRPS, 2003,pp. 497-501
2. G.S. Hwang et al "Modeling of charging damage during inter-level oxide deposition in high-density plasmas "in J.Appl.Phys.1998, pp.154-160.
3. A. Goda et al, "A Novel Surface-Oxidized Barrier-SiN Cell Technology to Improve Endurance and Read-Disturb Characteristics for Gigabit NAND Flash Memories" in Proceedings of the IEDM,2000,pp.771-774.
4. S.K. Park et al, "CMOSFET Characteristics Induced by Moisture Diffusion from Inter-Layer Dielectric in 0.23 um DRAM Technology with Shallow Trench Isolation" in Proceedings of the IRPS, 2000, pp. 164-167.
5. J.R. Shih et al, "The Study of Compressive and Tensile Stress on MOSFET's I-V, C-V characteristics and It's Impacts on Hot Carrier Injection and Negative Temperature Instability" in Proceedings of the IRPS, 2003, pp. 612-613