Negative bias temperature instability of carrier-transport enhanced pMOSFET with performance boosters

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 692-695

  Rhee, Hwa Sung ^a   Lee, Ho ^a   Ueno, Tetsuji ^a   Shin, Dong Suk ^a   Lee, Seung Hwan ^a   Kim, Yihwan ^c   Samoilov, A ^c   Hansson, Per Ove ^c   Kim, Min ^b   Kim, Hyong Soo ^b   Lee, Nae In ^a  

^a Advanced Technology Development   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; HYDROGEN; MOSFET DEVICES; SILICON NITRIDE; THIN FILMS;

CONTACT ETCH STOPPER LAYER (CESL); GATE OXIDES; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI);

CHARGE TRANSFER;

EID: 33847721005     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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