Impact of mechanical stress on interface trap generation in flash EEPROMs

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 250-256

  Toda, Akio ^a   Fujieda, Shinji ^a   Kanamori, Kohji ^b   Suzuki, Junichi ^b   Kuroyanagi, Kazumasa ^b   Kodama, Noriaki ^b   Den, Yasuhide ^b   Nishizaka, Teiichiro ^b  

^a NEC CORPORATION   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Data retention; Endurance; Flash EEPROMs; Interface traps; Mechanical stress

Indexed keywords

DATA RETENTION; FLASH EEPROMS; INTERFACE TRAPS; MECHANICAL STRESS;

DATA REDUCTION; DURABILITY; ELECTRIC CHARGE; ELECTRON DIFFRACTION; HYDROGEN; INTERFACES (MATERIALS); SILICON; STRESS ANALYSIS;

FLASH MEMORY;

EID: 28744442192     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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