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Volumn 103, Issue 6, 2008, Pages

Impact of mechanical stress on gate tunneling currents of germanium and silicon p -type metal-oxide-semiconductor field-effect transistors and metal gate work function

(5) Choi, Youn Sung a Numata, Toshinori a,c Nishida, Toshikazu a Harris, Rusty b Thompson, Scott E a

a University of Florida (United States)

b SEMATECH (United States)

c TOSHIBA CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMICAL ELECTRODES; MOS CAPACITORS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; STRESS ANALYSIS; VALENCE BANDS;

CARRIER SEPARATION; HOLE CURRENTS; TUNNELING CURRENTS; VOLTAGE SHIFT; WORK FUNCTIONS;

FIELD EFFECT TRANSISTORS;

EID: 41549120659 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2838234 Document Type: Article

Times cited : (28)

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