Electronic structure and charge transport properties of amorphous Ta2O5 films

Journal of Non-Crystalline Solids

Volumn 354, Issue 26, 2008, Pages 3025-3033

  Shvets, V A ^a   Aliev, V Sh ^a   Gritsenko, D V ^a   Shaimeev, S S ^a   Fedosenko, E V ^a   Rykhlitski, S V ^a   Atuchin, V V ^a   Gritsenko, V A ^a   Tapilin, V M ^b   Wong, H ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b BORESKOV INSTITUTE OF CATALYSIS   (Russian Federation)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Ab initio; Atomic force and scanning tunneling microscopy; Band structure; Dielectric properties, relaxation, electric modulus; Ellipsometry; XPS

Indexed keywords

ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; DIELECTRIC PROPERTIES; DIELECTRIC RELAXATION; ELECTRONIC STRUCTURE; ELLIPSOMETRY; OPTICAL BAND GAPS; SCANNING TUNNELING MICROSCOPY; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRIC MODULUS; ELECTRON CURRENT; EXTINCTION COEFFICIENT;

TANTALUM COMPOUNDS;

EID: 42649131357     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2007.12.013     Document Type: Article

References (42)

1. F. Rubio J.M. Albella J. Denis J.M. Martyinez J. Vac. Sci. Technol. 21 1982 1043
2. N. Novkovski E. Atanassova Appl. Phys. Lett. 86 2005 152104
3. P.C. Joshi M.W. Cole J. Appl. Phys. 86 1999 871
4. K. Chu J.P. Chang M.L. Steigerwald R.M. Fleming R.L. Opila D.V. Lang R.B. Van Dover C.D. Jones J. Appl. Phys. 92 2002 308
5. H. Wong H. Iwai Microelectron. Eng. 83 2006 1867
6. G.D. Wilk R.M. Wallace J.M. Anthony J. Appl. Phys. 89 2001 5243
7. V.A. Gritsenko K.A. Nasyrov Yu.N. Novikov A.L. Aseev S.Y. Yoon J.-W. Lee E.-H. Lee C.W. Kim Solid State Electron. 47 2003 1651
8. H. Kimura J. Mizuki S. Kamiyama H. Suzuki Appl. Phys. Lett. 66 1995 2209
9. P. Swift Surf. Interf. Anal. 4 1982 47
10. V.V. Atuchin I.E. Kalabin V.G. Kesler N.V. Pervukhina J. Electron. Spectrosc. Relat. Phenom. 142 2005 129
11. V.V. Atuchin V.G. Kesler N.V. Pervukhina Z. Zhang J. Electron. Spectrosc. Relat. Phenom. 152 2006 18
12. V.V. Atuchin O.A. Alekseeva V.G. Kesler L.D. Pokrovsky N.I. Sorokina V.I. Voronkova J. Solid State Chem. 179 2006 2349
13. V.V. Atuchin V.G. Kesler N. Yu. Maklakova L.D. Pokrovsky D.V. Sheglov Eur. Phys. J. B51 2006 293
14. C.H. An K. Sugimoto J. Electrochem. Soc. 141 1994 853
15. Y. Imai A. Watanabe M. Mukaida K. Osato T. Tsunoda T. Kameyama K. Fukuma Thin Solid Films 261 1995 76
16. E. Atanassova T. Dimitrova J. Koprinarova Appl. Surf. Sci. 84 1995 193
17. E. Atanassova D. Spassov Appl. Surf. Sci. 135 1998 71
18. M. Textor L. Ruiz R.F. Hofer A. Rossi K. Feldman G. Hahner N.D. Spencer Langmuir 16 2000 3257
19. S. Chatterjee S.K. Samanta C.K. Maiti J. Phys. D: Appl. Phys. 36 2003 901
20. W.-J. Chun A. Ishikawa H. Fujisawa T. Tanaka J.N. Kondo M. Hara M. Kawai Y. Matsumoto K. Domen J. Phys. Chem. B 107 2003 1798
21. E. Atanassova G. Tyuliev A. Paskaleva D. Spassov K. Kostov Surf. Sci. Spectra 11 2004 1
22. R.M.A. Azzam N.M. Bashara Ellipsometry and Polarized Light 1977 North Holland Amsterdam
23. A.V. Rzhanov Fundamentals of Ellipsometry 1977 Nauka Novosibirsk (in Russian)
24. D.E. Aspnes A.A. Studna Phys. Rev. B 27 1983 985
25. H. Arwin D.E. Aspnes Thin Solid Films 113 1984 101
26. J. Tauc Amorphous and Liquid Semiconductors 1974 Plenum New York
27. H. Demiryont J.R. Sites K. Geib Appl. Opt. 24 1985 490
28. J. Robertson J. Vac. Sci. Technol. B 18 2000 1785
29. N.C. Stephenson R.S. Roth Acta Crystallogr. B 27 1971 1037
30. H. Sawada K. Kawakami J. Appl. Phys. 86 1999 956
31. R. Ramprasad M. Sadd D. Roberts T. Remmel M. Raymond E. Luckowski S. Karpat C. Barron M. Miller Microelectron. Eng. 69 2003 190
32. M. Houssa M. Tuominen M. Naili V. Afanas’ev A. Stesmans S. Haukka M.M. Heyns J. Appl. Phys. 87 2000 8615
33. V.A. Gritsenko E.E. Meerson Yu.N. Morokov Phys. Rev. B 57 1997 R2081
34. K.A. Nasyrov Yu.N. Novikov V.A. Gritsenko S.Y. Yoon C.W. Kim JETP Lett. 77 2003 385
35. K.A. Nasyrov V.A. Gritsenko Yu.N. Novikov E.-H. Lee S.Y. Yoon C.W. Kim J. Appl. Phys. 96 2004 4293
36. B.C.-M. Lai J.-C. Yu J.Y.-M. Lee IEEE Electron. Dev. Lett. 22 2001 221
37. B.C.-M. Lai N.-H. Kung J.Y.-M. Lee J. Appl. Phys. 85 1999 4087
38. M. Stremme G.A. Niklasson M. Ritala M. Leskela K. Kukli J. Appl. Phys. 90 2001 4532
39. E. Atanassova N. Novkovski A. Paskaleva M. Pecovska-Gjorgjevich Solid State Electron. 46 2002 1887
40. T.V. Perevalov A.V. Shaposhnikov V.M. Tapilin K.A. Nasyrov D.V. Gritsenko V.A. Gritsenko E. Gusev Defects in High- k Gate Dielectric Stacks 2006 Springer
41. D.V. Gritsenko S.S. Shaimeev O.P. Pchelyakov V.A. Gritsenko JETP Lett. 81 2005 587
42. S. Baroni, A. Dal Corso, S. de Gironcoli, P. Giannozzi, C. Cavazzoni, G. Balladio, S. Scandolo, G. Chiarotti, P. Focker, A. Pasquarello, K. Laasonen, A. Trave, R. Car, N. Marzari, A. Kokalj, ESPRESSO Technical Report, http://www.pwscf.org/ .